1. Context
ALD was first developed in Finland in the early 1970s to meet a need in the electroluminescent panel industry (TFELs). To develop these products, it was necessary to deposit high-quality dielectric and luminescent thin films on large surfaces. The conventional deposition processes used at the time, such as evaporation or sputtering, did not meet these requirements.
T. Suntola and his team came up with the idea of depositing a material with the desired properties, ZnS, brick by brick, starting with elementary precursors (zinc and sulfur). In this way, precise thickness control could be achieved even over a large surface area. The ALE (Atomic Layer Epitaxy) technique was born.
From the 2000s onwards, ALE became ALD (Atomic Layer Deposition), as most deposition was by self-limiting surface reaction rather than epitaxy. For reasons of process...
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Context
General principle of ALD
Bibliography
Websites
ALD Pulse
http://aldpulse.com/ (page consulted on June 2, 2016)
BALD Engineering
http://www.baldengineering.com/ (page consulted on June 2, 2016)
Virtual Project on the History of ALD...
Events
AVS-ALD conference, congress (conferences + trade show) held each year on a different continent.
Baltic-ALD conference, held every other year in a European city
Patents
Method for producing compound thin films, US. Patent 4 058 430 (1977).
Directory
Organizations – Federations – Associations (non-exhaustive list)
RafALD, French ALD Players' Network
HERALD, Hooking together European research in Atomic Layer Deposition
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