Overview
ABSTRACT
The property of elements to emit characteristic radiations following an excitation by X-rays called X-ray fluorescence is exploited for quantification. The equations describing this light-matter interaction are recalled as well as the experimental conditions necessary to overcome the reference standard needs.
X-ray fluorescence can also be exploited by combining it with X-ray reflectivity for the study of thin layers of nanometric thickness. The approach presented here exploits fundamental parameters whose issues of accuracy and associated uncertainties are addressed from a metrological perspective.
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Read the articleAUTHOR
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Yves MÉNESGUEN: Researcher, PhD HdR - Université Paris-Saclay, CEA, LIST, Laboratoire National Henri Becquerel (LNE-LNHB), Palaiseau, France
INTRODUCTION
X-ray fluorescence is the emission of photon radiation from a vacancy created in an atom's electron pattern by higher-energy photon excitation. This way of interrogating matter is potentially non-destructive for the sample to be measured, as it requires no special preparation. The quantification possible with this technique concerns the quantity of matter given in mass or surface mass, or the number of atoms, and so on. Nevertheless, in the majority of current applications, sample preparation is an essential step, the reason being the need to calibrate the measuring device for the mass ranges of interest. Here, we place ourselves within the general framework of the fundamental equations of this interaction in order to present quantification without reference, i.e. based solely on fundamental principles, with its advantages and disadvantages.
We will present the equations for this interaction, followed by an application to the quantification of nanometer-thick thin films, for which it is unrealistic to use multiple reference samples to calibrate a measuring device. The analysis technique combining X-ray reflectivity (XRR) and grazing incidence X-ray fluorescence (GIXRF) is designed without reference to standards, and uses calculation of the stationary electric field in the layer(s) to deduce the X-ray fluorescence emission profile. This method combines the electron density sensitivity of X-ray reflectivity with the atomic sensitivity of X-ray fluorescence to deduce the density, thickness, interface roughness and atomic composition of thin films.
We will present the tools needed to implement this approach, as well as the fundamental data on which the calculation is based. The tools concern the X-ray source, which must be monochromatic, and whose beam must have as little divergence as possible, given the angular accuracy required. The detectors are of two types:
photodiode-type photon integrators which measure a current proportional to the quantity of photons entering, but do not provide information on their spectral distribution;
spectrometers, which measure the energy of individual photons to produce a line spectrum representative of the various emitting atoms.
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KEYWORDS
thin film | X-ray | X-ray Fluorescence | Elemental quantification | XRR-GIXRF combined analysis | light-matter interaction | X-ray reflectivity
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Mechanical and dimensional measurements
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