Determining the GPC
Input of In situ characterisation in atomic layer deposition (ALD) processes.
Research and innovation REF: RE263 V1
Determining the GPC
Input of In situ characterisation in atomic layer deposition (ALD) processes.

Authors : Jean-Luc DESCHANVRES, Carmen JIMENEZ

Publication date: October 10, 2016 | Lire en français

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2. Determining the GPC

As explained in the article General Principles of ALD [RE253] , the ALD process is characterized by a specific parameter which replaces the growth rate in nm/s or µm/h used in other processes. This is growth per cycle (GPC). This parameter cannot be considered as a unit, as the cycle has neither a unique definition nor a known unit, but it does highlight the ALD deposition window and the self-limiting nature of the process. To determine the GPC in situ, in addition to the classic techniques already used ex situ, such as optical measurements, whether in the visible or near-visible range with ellipsometry,...

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