Input of In situ characterisation in atomic layer deposition (ALD) processes.
Research and innovation REF: RE263 V1

Input of In situ characterisation in atomic layer deposition (ALD) processes.

Authors : Jean-Luc DESCHANVRES, Carmen JIMENEZ

Publication date: October 10, 2016 | Lire en français

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Overview

ABSTRACT

In situ characterisation is the main research approach to improving our understanding and control of the growth mechanisms governing atomic layer deposition (ALD) processes. In this article, the in situ techniques will be presented as a function of the information they can provide about the ALD deposition: first, determination of the ALD window, then reactional mechanisms, and finally correlation of deposition parameters and physical properties of grown films.

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AUTHORS

  • Jean-Luc DESCHANVRES: CNRS Research Fellow - Affiliation Materials and Physical Engineering Laboratory (LMGP) - Université Grenoble Alpes, LMGP, F-38000 Grenoble, France ; CNRS, LMGP, F-38000 Grenoble, FRANCE.

  • Carmen JIMENEZ: CNRS Research Engineer - Affiliation Materials and Physical Engineering Laboratory (LMGP) - Université Grenoble Alpes, LMGP, F-38000 Grenoble, France ; CNRS, LMGP, F-38000 Grenoble, FRANCE.

 INTRODUCTION

Key points

Domain: Innovation,

Degree of technology dissemination: Emergence | Growth | Maturity Technologies involved : Atomic Layer Deposition (ALD)

Applications: Microelectronics, energy, OLEDs, healthcare,

Main French players :

Competitive clusters: Minalogic, Tenerrdis

Competence centers: OMNT ( https://www.omnt.fr/fr/ )

Manufacturers: OEMs (Encapsulix, Annealsys, Picosun, Beneq)

Other players worldwide :

Contact: [email protected] ; [email protected]

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KEYWORDS

reaction mechanisms   |   atomic layer deposition   |   in situ characterization   |   quartz crystal micro-balance

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The contribution of in situ characterization to ALD processes

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