1. Home
  2. Innovations
  3. Technological innovations

  4. Input of In situ characterisation in atomic layer deposition (ALD) processes.

Research and innovation | REF: RE263 V1

Input of In situ characterisation in atomic layer deposition (ALD) processes.

Authors: Jean-Luc DESCHANVRES, Carmen JIMENEZ

Publication date: October 10, 2016 | Lire en français

You do not have access to this resource.
Click here to request your free trial access!

Already subscribed? Log in!

Automatically translated using artificial intelligence technology (Note that only the original version is binding) > find out more.

    A  |  A

    Overview

    ABSTRACT

    In situ characterisation is the main research approach to improving our understanding and control of the growth mechanisms governing atomic layer deposition (ALD) processes. In this article, the in situ techniques will be presented as a function of the information they can provide about the ALD deposition: first, determination of the ALD window, then reactional mechanisms, and finally correlation of deposition parameters and physical properties of grown films.

    Read this article from a comprehensive knowledge base, updated and supplemented with articles reviewed by scientific committees.

    Read the article

    AUTHORS

    • Jean-Luc DESCHANVRES: CNRS Research Fellow - Affiliation Materials and Physical Engineering Laboratory (LMGP) - Université Grenoble Alpes, LMGP, F-38000 Grenoble, France ; CNRS, LMGP, F-38000 Grenoble, FRANCE.

    • Carmen JIMENEZ: CNRS Research Engineer - Affiliation Materials and Physical Engineering Laboratory (LMGP) - Université Grenoble Alpes, LMGP, F-38000 Grenoble, France ; CNRS, LMGP, F-38000 Grenoble, FRANCE.

     INTRODUCTION

    Key points

    Domain: Innovation,

    Degree of technology dissemination: Emergence | Growth | Maturity Technologies involved : Atomic Layer Deposition (ALD)

    Applications: Microelectronics, energy, OLEDs, healthcare,

    Main French players :

    Competitive clusters: Minalogic, Tenerrdis

    Competence centers: OMNT ( https://www.omnt.fr/fr/ )

    Manufacturers: OEMs (Encapsulix, Annealsys, Picosun, Beneq)

    Other players worldwide :

    Contact: [email protected] ; [email protected]

    You do not have access to this resource.

    Exclusive to subscribers. 97% yet to be discovered!

    You do not have access to this resource.
    Click here to request your free trial access!

    Already subscribed? Log in!

    The Ultimate Scientific and Technical Reference

    A Comprehensive Knowledge Base, with over 1,200 authors and 100 scientific advisors
    + More than 10,000 articles and 1,000 how-to sheets, over 800 new or updated articles every year
    From design to prototyping, right through to industrialization, the reference for securing the development of your industrial projects

    KEYWORDS

    reaction mechanisms   |   atomic layer deposition   |   in situ characterization   |   quartz crystal micro-balance

    This article is included in

    Technological innovations

    This offer includes:

    Knowledge Base

    Updated and enriched with articles validated by our scientific committees

    Services

    A set of exclusive tools to complement the resources

    Practical Path

    Operational and didactic, to guarantee the acquisition of transversal skills

    Doc & Quiz

    Interactive articles with quizzes, for constructive reading

    Subscribe now!

    Ongoing reading
    The contribution of in situ characterization to ALD processes
    Outline