6. 

References GRIFFITH (Z.) RODWELL (M.J.W.) FANG (X.-M.) LOUBYCHEV (D.) WU (Y.) FASTENAU (J.M.) LIU (A.W.K) InGaAs/InP DHBTs with 120-nm collector having simultaneously high f _T  , $f_{max}⩾450GHz$ . IEEE Electron Device Letters, 26(9), p. 530-2 (2005). TSAI (M.-K.) TAN (S.-W.) YANG (Y.-J.) LOUR (W.-S.) Improvements in direct-current characteristics of Al _...