5. Conclusions and outlook

This article, supported by the previous one [E 2 380] , presents an overview of the FD-SOI sector. The basic devices, with their specific characterization methods and physical mechanisms, have been reviewed. Certain principles, methods and components remain valid in other technologies: FinFET, nanowires, 2D materials.

Progress in SOI, leading to transistors well under 10 nm thick, has been breathtaking. French researchers and engineers have distinguished themselves in the discovery and development of Smart-Cut material and integration processes, as well as in the understanding...