4. Innovative devices in FD-SOI technology

The advantages of FD-SOI (ultra-thin film, dielectric insulation, substrate biasing, etc.) have led to the development of a number of original devices, some of which are presented in this chapter. By way of example, the tunnel transistor (TFET) is in fact a PIN diode, as shown in figure 21 a, reverse-biased. A positive voltage on the gate emulates an N ⁺ region adjacent to the P ⁺ terminal. The band-to-band tunneling (BTBT) mechanism generates a current that theoretically benefits from a sub-threshold (swing) slope below the thermodynamic limit of 60 mV/decade