2. Special physical mechanisms in FD-SOI transistors

2.1 Short channel effects

As the transistor length decreases, various mechanisms become sufficiently amplified to challenge the totalitarian supremacy of the gate over the channel. For example, the charge sharing effect (CSE), between regions controlled by the gate or by the source and drain junctions, leads to a decrease in the threshold voltage V _TF measured at low drain voltage V _D (figure 2 ).