2. Special physical mechanisms in FD-SOI transistors
2.1 Short channel effects
As the transistor length decreases, various mechanisms become sufficiently amplified to challenge the totalitarian supremacy of the gate over the channel. For example, the charge sharing effect (CSE), between regions controlled by the gate or by the source and drain junctions, leads to a decrease in the threshold voltage V TF measured at low drain voltage V D (figure 2 ).
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Special physical mechanisms in FD-SOI transistors
Specific techniques for characterizing FD-SOI components
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