Total depletion MOS transistors
Silicon-on-insulator technology
Quizzed article REF: E2380 V2
Total depletion MOS transistors
Silicon-on-insulator technology

Authors : Sorin CRISTOLOVEANU, Francis BALESTRA

Publication date: August 10, 2013, Review date: January 13, 2021 | Lire en français

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5. Total depletion MOS transistors

In MOS transistors on SOI (figure 1 b), inversion channels can be activated both at the interface between the thin silicon layer and the front gate oxide (via the front gate VGS1 ) and at the silicon/buried oxide interface (via the substrate, which acts as a back gate VGS2...

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