Static SIMS surface analysis
Secondary ion mass spectrometry: SIMS and ToF-SIMS Analytical procedures and performances
Article REF: P2619 V2
Static SIMS surface analysis
Secondary ion mass spectrometry: SIMS and ToF-SIMS Analytical procedures and performances

Authors : Evelyne DARQUE-CERETTI, Marc AUCOUTURIER, Patrice LEHUÉDÉ

Publication date: March 10, 2015 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

3. Static SIMS surface analysis

The very low current analysis of primary ions, for which it is possible to detect the complete spectrum of the very first atomic or molecular layers of the surface (the first two atomic layers or the first molecular layer), makes SIMS, and ToF-SIMS in particular, a surface analysis method in the strict sense.

This type of analysis has developed considerably since the early 2000s, given the importance of work on organic and biological compounds, and on surface contamination (glass and semiconductors). Significant technical improvements have accompanied this development, and instruments are currently equipped with the following two primary ion sources.

Analysis cannon: heavy ions or aggregates (such as Bi + or Bi3+...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Article included in this offer

"Analysis and Characterization"

( 256 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details