2. MOS capacitance

The MOS capacitor forms the basis of the MOS transistor and consists of a stack of a metal, an insulator, and a semiconductor (Figure 4 ). In industrial CMOS technologies, the semiconductor is silicon, and the insulator is, at least in part, silicon dioxide (SiO ₂ ), to ensure a high-quality interface with the silicon substrate. The metal is generally composed of titanium nitride (TiN) for advanced technologies, and degenerately doped polysilicon for others. The voltage applied to the gate is denoted $V_{\mathrm{G}}$ and the value of the electrostatic potential...